DMA10P1600PZ phase leg standard rectifier 1 4 3 part number DMA10P1600PZ backside: anode/cathode fav f vv 1.21 rrm 10 1600 = v= v i= a 2x features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-263 (d2pak-hv) industry standard outline rohs compliant epoxy meets ul 94v-0 high creepage distance between terminals ixys reserves the right to change limits, conditions and dimensions. 20130108b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA10P1600PZ v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.26 r 1.5 k/w r min. 10 v rsm v 10 t = 25c vj t = c vj ma 0.2 v = v r t = 25c vj i = a f v t = c c 150 p tot 100 w t = 25c c r k/w 10 1600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.53 t = 25c vj 150 v f0 v 0.82 t = c vj 175 r f 37 m ? v 1.21 t = c vj i = a f v 10 1.57 i = a f 20 i = a f 20 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 4 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 120 130 50 50 a a a a 100 110 72 70 1600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.25 ixys reserves the right to change limits, conditions and dimensions. 20130108b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA10P1600PZ ratings product m a r k i n g date code part no. logo assembly code xxxxxxxxx ixys yyww z 000000 assembly line d m a 10 p 1600 pz part number diode standard rectifier (up to 1800v) phase leg to-263ab (d2pak) (2hv) = = = current rating [a] reverse voltage [v] = = = = package t vj c t stg c 150 storage temperature -55 weight g 1.5 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 60 mounting force with clip 20 mm mm 4.2 4.9 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 25 a per terminal 175 -55 terminal to terminal to-263 ( d2pak-hv ) delivery mode quantity code no. part number marking on product ordering DMA10P1600PZ 513688 tape & reel 800 DMA10P1600PZ standard threshold voltage v 0.82 m ? v 0 max r 0 max slope resistance * 34 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130108b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA10P1600PZ w c2 a a1 c l a2 2x b2 e1 2x b h d1 supplier option 4 d2 e 2x e l1 d 3 1 e1 min max min max a 4.06 4.83 0.160 0.190 a1 a2 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 d 8.38 9.40 0.330 0.370 d1 8.00 8.89 0.315 0.350 d2 e 9.65 10.41 0.380 0.410 e1 6.22 8.50 0.245 0.335 e e1 h 14.61 15.88 0.575 0.625 l 1.78 2.79 0.070 0.110 l1 1.02 1.68 0.040 0.066 w typ. 0.02 0.040 typ. 0.0008 0.002 dim. millimeter inches typ. 0.10 typ. 0.004 2.41 0.095 0.098 4.28 0.169 all dimensions conform with and/or within jedec standard. 2,54 bsc 0,100 bsc 2.5 1 4 3 outlines to-263 (d2pak-hv) ixys reserves the right to change limits, conditions and dimensions. 20130108b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA10P1600PZ 0.001 0.01 0.1 1 40 60 80 100 234567890 1 1 10 1 10 2 0.51.01.52.0 0 5 10 15 20 024681012 0 2 4 6 8 10 12 14 16 18 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 0 50 100 150 200 0 4 8 12 16 20 24 28 i f [a] v f [v] i fsm [a] t[s] i 2 t [a 2 s] t[ms] p tot [w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current and ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t[ms] constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 40.3 0.8 5 0.00001 0.00001 0 50 100 150 200 50 hz, 80%v rrm t vj =45c t vj =45c v r =0 v t vj =150c t vj =150c t vj =25c t vj = 125c t vj =150c r thha = 4k/w 8k/w 10 k/w 12 k/w 16 k/w 20 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130108b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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